aptm120u10dag aptm120u100dag rev 2 june, 2008 www.microsemi.com 1 ? 6 d s g sk absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdo wn voltage 1200 v t c = 25c 116 i d continuous drain current t c = 80c 86 i dm pulsed drain current 464 a v gs gate - source voltage 30 v r dson drain - source on resistance 120 m p d maximum power dissipation t c = 25c 3290 w i ar avalanche current (repetitive and non repetitive) 24 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3200 mj v dss = 1200v r dson = 100m typ @ tj = 25c i d = 116a @ tc = 25c application ? zero current switching resonant mode features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant single switch with series diodes m osfet power module
aptm120u10dag aptm120u100dag rev 2 june, 2008 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 1200v t j = 25c 1 i dss zero gate voltage drain current v gs = 0v,v ds = 1000v t j = 125c 3 ma r ds(on) drain ? source on resistance v gs = 10v, i d = 58a 100 120 m v gs(th) gate threshold voltage v gs = v ds , i d = 20ma 3 5 v i gss gate ? source leakage current v gs = 30 v, v ds = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 28.9 c oss output capacitance 4.4 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.8 nf q g total gate charge 1100 q gs gate ? source charge 128 q gd gate ? drain charge v gs = 10v v bus = 600v i d = 116a 716 nc t d(on) turn-on delay time 20 t r rise time 17 t d(off) turn-off delay time 245 t f fall time inductive switching @ 125c v gs = 15v v bus = 800v i d = 116a r g =1.2 62 ns e on turn-on switching energy 5 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 800v i d = 116a, r g = 1.2 ? 4.6 mj e on turn-on switching energy 9.2 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 800v i d = 116a, r g = 1.2 ? 5.6 mj series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 v t j = 25c 1500 i rm maximum reverse leakage current v r =1200v t j = 125c 2500 a i f dc forward current t c = 70c 180 a i f = 180a 2 2.5 i f = 360a 2.3 v f diode forward voltage i f = 180a t j = 125c 1.8 v t j = 25c 370 t rr reverse recovery time t j = 125c 500 ns t j = 25c 3.9 q rr reverse recovery charge i f = 180a v r = 800v di/dt = 800a/s t j = 125c 20.7 c
aptm120u10dag aptm120u100dag rev 2 june, 2008 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit transistor 0.038 r thjc junction to case thermal resistance series diode 0.22 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructi ons for sp6 power modules on www.microsemi.com
aptm120u10dag aptm120u100dag rev 2 june, 2008 www.microsemi.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impeda nce, junction to case vs pulse duration 4.5v 5v 5.5v 6v 7v 0 40 80 120 160 200 240 280 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =15, 10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 40 80 120 160 200 240 280 320 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 40 80 120 160 200 240 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 58a 0 20 40 60 80 100 120 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
aptm120u10dag aptm120u100dag rev 2 june, 2008 www.microsemi.com 5 ? 6 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d =58a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10ms 1ms 100s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r ds on single pulse t j =150c t c =25c 1200 ciss crss coss 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =240v v ds =600v v ds =960v 0 2 4 6 8 10 12 14 0 300 600 900 1200 1500 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =116a t j =25c
aptm120u10dag aptm120u100dag rev 2 june, 2008 www.microsemi.com 6 ? 6 delay times vs current t d(on) t d(off) 0 50 100 150 200 250 300 30 60 90 120 150 180 i d , drain current (a) t d(on) and t d(off) (ns) v ds =800v r g =1.2 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 30 60 90 120 150 180 i d , drain current (a) t r and t f (ns) v ds =800v r g =1.2 ? t j =125c l=100h switching energy vs current e on e off 0 4 8 12 16 30 60 90 120 150 180 i d , drain current (a) switching energy (mj) v ds =800v r g =1.2 ? t j =125c l=100h e on e off e off 4 8 12 16 20 24 02468 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =800v i d =116a t j =125c l=100h hard switching zcs 0 25 50 75 100 125 150 175 30 50 70 90 110 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =800v d=50% r g =1.2 ? t j =125c t c =75c t j =25c t j =150c 1 10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s pate nts 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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